NW302系列压力变送器

分类：压力传感器
品牌：纳微电子
厂商：无锡市纳微电子有限公司
型号：NW302
相关行业：

发布时间：2012-11-21 10:21
浏览人数：人

产品详情

PRESSURE MEASUREMENT FOR APPLINCES

OEM Gauge Pressure Transducer Type NW302
Pressure range 0 – 4.0 bar

Type NW302 series pressure transducers are designed and manufactured for measuring hydraulic pressure in heating water. NW302 is particularly suitable for application of gas heater.
Due to automated testing and compensating we are able to handle customer order in a high volume.

●Best price/performance ratio around world through
- integrated our own MEMS & ASIC dies.
- optimized mounting
- automatic massive production and test
●especially design only for gas heater application.
●The MEMS die includes the well proven SOI technology of Nano MEMS Inc..

Technical Overview
Operation Condition
Characteristic	NW302A5	NW302B3	NW302B4	NW302C5	Units
Excitation Voltage	5±0.25 V DC	5±0.25 V DC	5±0.25 V DC	5±0.25 V DC	V
Pressure Range(differencial)	0 – 4.5	0 – 3.5	0 – 4	0 – 4 .5	bar
Type of Pressure	Gauge Pressure
Proof Pressure	2X	2X	2X	2X	P_range
Burst Pressure	3X	3X	3X	3X	P_range
Medium Temperature	0^oC – 90^oC
Ambient Temperature	0^oC – 90^oC
Compensation Temperature	10^oC – 80^oC
Storage Temperature	-30^oC – 100^oC
Rated Offset Voltage	1.125±0.105	1.125±0.105	1.125±0.105	0.5	V
Rated Span Voltage	3.6±0.24	3.05±.02	3.325	4.5	V
Electrical Characteristic
Pressure Hysteresis	0.05				%FS
Thermal Accuracy-Zero Offset	0.2				%FS
Thermal Accuracy-Span	0.2				%FS
Long Term Stability(1year)	0.3				%Span
Total of Linearity, Hysteresis, and repeatability	0.5				%FS
Resolution	0.1				%FS
Overall Accuracy	1.5				%FS
Response Time	2				ms
Current Consumption	Max. 3				mA
(Reference conditions: Supply voltage Vs = 5Vdc; 50% RH; Ambient Temperature T = 25^oC)

Reference Data
(1 ) Output voltage Drive voltage: 5V DC Temperature: 25^oC Applied Pressure：0 to 300KPa	(2 ) Output accuracy(Offset Voltage) Drive voltage: 5V DC Temperature: 0 - 100^oC Applied Pressure：0 KPa	(3 ) Output accuracy(Rated Output Voltage) Drive voltage: 5V DC Temperature: 0 - 100^oC Applied Pressure：300KPa

Electrical Characteristics of Pressure Sensor Die (MEMS)
(Reference conditions: Supply voltage Vs = 5Vdc; Ambient Temperature Ta = 25^oC)
	Mim	Typ	Max	Unit	Note
Operating Pressure Range	0		4	bar
Operating Temperature Range	-40		125	^oC
Bridge Resistance	4.8	5.	5.2	KΩ
Full-Scale Span(FS)	60	80	100	mV
Zero Pressure Offset	-10	0	10	mV
Linearity		±0.05	±0.2	%FS	1
Temperature Coefficient of Resistance Span Offset	+2400 -1500 -80	+2800 -1900	+3300 -2300 +80	ppm/^oC ppm/^oC uV/^oC	2
Pressure Hysteresis		±0.05	±0.15	%FS	3
Repeatability		±0.1	±0.2	%FS	4
Temperature Hysteresis			0.3	%FS	5
Note: Deviation at one half full-scale pressure from the least squares best line fit over pressure range(0 – 4 Bar) Slope of the endpoint straight line from 25^oC to 80^oC. Output deviation at any pressure within the specified range, when this pressure is cycled to and from the minimum or maximum rated pressure , at 25^oC. Same as 3) after pressure cycles. Maximum difference in offset after one thermal cycle from -40^oC to +125^oC.

Electrical Architecture of ASIC
As shown in the Figure , the chip consists of two dies. One is the piezo‐resistive bridge. And another is circuit. The two parts are bonded together in the single package. The piezo‐resistive bridge contains a external temperature sensor. And the circuit mainly contains a internal temperature sensor, a low noise high precision analog front end, a low noise 16‐bits sigma‐delta ADC, on‐chip/or temperature sensor, LDOs, OTP, DAC, register file and I2C interface. Internal clock oscillators and PMU provides flexible settings for low power applications. Some IOs are not bounded out to pins. It includes (DEBUG0, DEBUG1 and RESET). The IOs are for debugging in bring up stage. Also IOs include GND, VDRV, INP, INN,TEMPIN, bonds with piezo‐resistive bridge.

Electrical Architecture of ASIC

As shown in the Figure , the chip consists of two dies. One is the piezo‐resistive bridge. And another is circuit.
The two parts are bonded together in the single package.
The piezo‐resistive bridge contains a external temperature sensor.
And the circuit mainly contains a internal temperature sensor, a low noise high precision analog front end, a low
noise 16‐bits sigma‐delta ADC, on‐chip/or temperature sensor, LDOs, OTP, DAC, register file and I2C interface.
Internal clock oscillators and PMU provides flexible settings for low power applications.
Some IOs are not bounded out to pins. It includes (DEBUG0, DEBUG1 and RESET). The IOs are for debugging in
bring up stage.
Also IOs include GND, VDRV, INP, INN,TEMPIN, bonds with piezo‐resistive bridge.

Package Dimensions
NW302A	NW302B	NW302D


Pin-Out（ for flexible wire）
		1 VCC = red 3 OUT = yellow 4 GND =black

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